Statistically reliable 'Atomistic' Simulation of Sub 100 nm MOSFETs
نویسنده
چکیده
A 3D 'atomistic' simulation technique to study random impurity induced threshold voltage lowering and fluctuations in sub 0.1 w MOSFETs is presented. It allows stat.st.cal analys.s of random impurity effects down to the individual impurity level. Efficcnt algorithms based on a single solution of Poisson's equation, followed by the solution of a s.mpl.f.ed current continuity equation arc used in the simulations.
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